Controlling anion composition at MIS interfaces on III-V channels by plasma processing

W. Jevasuwan; Y. Urabe; T. Maeda; N. Miyata; T. Yasuda; A. Ohtake; H. Yamada; M. Hata; S. Lee; T. Hoshii; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2011.E-8-5

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-8-5] Controlling anion composition at MIS interfaces on III-V channels by plasma processing

W. Jevasuwan¹、Y. Urabe¹、T. Maeda¹、N. Miyata¹、T. Yasuda¹、A. Ohtake²、H. Yamada³、M. Hata³、S. Lee⁴、T. Hoshii⁴、M. Takenaka⁴、S. Takagi⁴ (1.AIST、2.NIMS、3.Sumitomo Chemical Co., Ltd.、4.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.E-8-5

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