[E-8-6] Formation of Ultra-thin and Uniform Ni-InGaAs Alloyed Contact for Scaled Metal S/D InGaAs MOSFETs

T. Irisawa¹、M. Oda¹、T. Tezuka¹ (1.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.E-8-6