Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET

T. Hayashida; K. Endo; Y. X. Liu; S. O'uchi; T. Matsukawa; W. Mizubayashi; S. Migita; Y. Morita; H. Ota; H. Hashiguchi; D. Kosemura; T. Kamei; J. Tsukada; Y. Ishikawa; H. Yamauchi; A. Ogura; M. Masahara

doi:https://doi.org/10.7567/SSDM.2011.E-9-3

[E-9-3] Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET

T. Hayashida^1,2, K. Endo³, Y. X. Liu³, S. O'uchi³, T. Matsukawa³, W. Mizubayashi³, S. Migita³, Y. Morita³, H. Ota³, H. Hashiguchi¹, D. Kosemura¹, T. Kamei¹, J. Tsukada³, Y. Ishikawa³, H. Yamauchi³, A. Ogura¹, M. Masahara^1,3 (1.Meiji Univ., 2.JSPS, 3.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.E-9-3

2011 International Conference on Solid State Devices and Materials

[E-9-3] Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET