[E-9-3] Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET

T. Hayashida^1,2、K. Endo³、Y. X. Liu³、S. O'uchi³、T. Matsukawa³、W. Mizubayashi³、S. Migita³、Y. Morita³、H. Ota³、H. Hashiguchi¹、D. Kosemura¹、T. Kamei¹、J. Tsukada³、Y. Ishikawa³、H. Yamauchi³、A. Ogura¹、M. Masahara^1,3 (1.Meiji Univ.、2.JSPS、3.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.E-9-3