[E-9-4L] Extremely scaled (~0.2 nm) equivalent oxide thickness of higher-k ALD-HfO₂ gate stacks

Y. Morita¹、S. Migita¹、W. Mizubayashi¹、H. Ota¹ (1.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.E-9-4L