[F-1-2] Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs

T. Ohsawa¹、F. Iga¹、S. Ikeda¹、T. Hanyu¹、H. Ohno¹、T. Endoh¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.F-1-2