[F-1-2] Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs
T. Ohsawa1, F. Iga1, S. Ikeda1, T. Hanyu1, H. Ohno1, T. Endoh1
(1.Tohoku Univ. , Japan)
https://doi.org/10.7567/SSDM.2011.F-1-2