[F-1-4] Novel 2step Writing Method for STT-RAM to Improve Switching Probability and Write Speed

F. Iga¹, Y. Suzuki¹, T. Ohsawa¹, S. Ikeda¹, T. Hanyu¹, H. Ohno¹, T. Endoh¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.F-1-4