[F-3-3] Disturb-free 3D vertical FG NAND with Separated-Sidewall Control Gate

M. S. Seo^1,2、T. Endoh^1,2 (1.Tohoku Univ.、2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.F-3-3