Effects of Ti interfacial layer on resistive switching memory performance using Cu filament in high-k Ta<sub>2</sub>O<sub>5</sub>solid-electrolyte

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

A. K. Sahoo¹, S. Z. Rahaman¹, S. Maikap¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.ITRI , Taiwan)