[K-2-3] Argon Ion Bombardment to Improve Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor

X. Yi¹, G. Nakagawa¹, H. Ozawa¹, T. Fujigaya¹, N. Nakashima¹, T. Asano¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.K-2-3