High-performance Carbon Nanotube Thin-film Transistors with &gt;600 cm2V-1s-1 Mobility and &gt;107 On/off Ratio

D. M. Sun; M. Y. Timmermans; Y. Tian; A. G. Nasibulin; S. Kishimoto; T. Mizutani; E. I. Kauppinen; Y. Ohno

doi:https://doi.org/10.7567/SSDM.2011.K-3-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[K-3-3] High-performance Carbon Nanotube Thin-film Transistors with >600 cm²V^-1s^-1 Mobility and >10⁷ On/off Ratio

D. M. Sun¹、M. Y. Timmermans²、Y. Tian²、A. G. Nasibulin²、S. Kishimoto¹、T. Mizutani¹、E. I. Kauppinen²、Y. Ohno¹ (1.Nagoya Univ. , Japan、2.Aalto Univ. , Finl)

https://doi.org/10.7567/SSDM.2011.K-3-3

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2011 International Conference on Solid State Devices and Materials

[K-3-3] High-performance Carbon Nanotube Thin-film Transistors with >600 cm2V-1s-1 Mobility and >107 On/off Ratio

[K-3-3] High-performance Carbon Nanotube Thin-film Transistors with >600 cm²V^-1s^-1 Mobility and >10⁷ On/off Ratio