A Novel FEM-LDMOS of Improved Off-state Breakdown Voltage Without Additional Mask

H. B. Chen; C. J. Chang; J. J. Wu; W. C. Chen; C. C. Tsai; C. Y. Chang

doi:https://doi.org/10.7567/SSDM.2011.L-8-4

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[L-8-4] A Novel FEM-LDMOS of Improved Off-state Breakdown Voltage Without Additional Mask

H. B. Chen¹、C. J. Chang²、J. J. Wu¹、W. C. Chen³、C. C. Tsai²、C. Y. Chang¹ (1.National Chiao Tung Univ.、2.Himax Technologies、3.Vanguard International Semiconductor Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2011.L-8-4

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