A Novel FEM-LDMOS of Improved Off-state Breakdown Voltage Without Additional Mask

H. B. Chen; C. J. Chang; J. J. Wu; W. C. Chen; C. C. Tsai; C. Y. Chang

doi:https://doi.org/10.7567/SSDM.2011.L-8-4

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[L-8-4] A Novel FEM-LDMOS of Improved Off-state Breakdown Voltage Without Additional Mask

H. B. Chen¹, C. J. Chang², J. J. Wu¹, W. C. Chen³, C. C. Tsai², C. Y. Chang¹ (1.National Chiao Tung Univ., 2.Himax Technologies, 3.Vanguard International Semiconductor Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2011.L-8-4

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