Tilted domain and indium content of MOVPE-grown InGaN layer on <i>m</i>-plane GaN substrate

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

K. Shojiki¹, T. Hanada^1,2, T. Shimada¹, Y. Liu^1,2, R. Katayama^1,2, T. Matsuoka^1,2 (1.Tohoku Univ., 2.CREST-JST , Japan)