[P-1-16] Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel

C. H. Cho¹、S. K. Lim¹、C. G. Kang¹、Y. G. Lee¹、H. J. Hwang¹、E. Park¹、B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

https://doi.org/10.7567/SSDM.2011.P-1-16