Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

C. H. Cho¹, S. K. Lim¹, C. G. Kang¹, Y. G. Lee¹, H. J. Hwang¹, E. Park¹, B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)