Formation of Ohmic Contacts with Shallow NiGe/n<sup>+</sup> Ge Junction

M. Miura; M. Noguchi; J. Fujikata; T. Horikawa; M. Takahashi; Y. Noguchi; Y. Arakawa

doi:https://doi.org/10.7567/SSDM.2011.P-1-6

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-1-6] Formation of Ohmic Contacts with Shallow NiGe/n⁺ Ge Junction

M. Miura^1,2、M. Noguchi^1,2、J. Fujikata^1,2、T. Horikawa^1,3、M. Takahashi^1,3、Y. Noguchi^1,3、Y. Arakawa^1,4 (1.PECST、2.PETRA、3.AIST、4.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.P-1-6

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2011 International Conference on Solid State Devices and Materials

[P-1-6] Formation of Ohmic Contacts with Shallow NiGe/n+ Ge Junction

[P-1-6] Formation of Ohmic Contacts with Shallow NiGe/n⁺ Ge Junction