Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

M. D. Ko¹, S. H. Lee¹, R. H. Baek¹, C. H. Park¹, C. W. Sohn¹, C. K. Baek^1,2, J. S. Lee¹, Y. H. Jeong¹ (1.POSTECH, 2.NCNT , Korea)