A Multi Switching Current Study of Single-Electron Transistors Using Side Gate Bias Effect

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

J. E. Lee¹, K. W. Kim¹, J. H. Lee¹, K .C. Kang¹, H. Shin¹, K. Yoh², B. G. Park¹ (1.Seoul National Univ. , Korea, 2.Hokkaido Univ. , Japan)