[P-3-10] Integration of InGaAs Nanowire Vertical Surrounding-Gate Transistors on Si K. Tomioka1,2、M. Yoshimura1、T. Fukui1 (1.Hokkaido Univ.、2.PRESTO-JST , Japan) https://doi.org/10.7567/SSDM.2011.P-3-10