[P-3-2] Saturation Behavior in the Generation of Interface Traps by Hot-Carrier Stress in Nanoscale MOSFETs

M. Hu¹、T. Yamane¹、T. Tsuchiya¹ (1.Shimane Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-3-2