The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-3-5] The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack

D. W. Kim1, S. H. Lee1, C. G. Kim1, T. K. Oh2, B. K. Kang1 (1.Pohang Univ. Sci. Tech., 2.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2011.P-3-5