[P-3-5] The Effect of La₂O₃ Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack

D. W. Kim¹、S. H. Lee¹、C. G. Kim¹、T. K. Oh²、B. K. Kang¹ (1.Pohang Univ. Sci. Tech.、2.Hynix Semiconductor Inc. , Korea)

https://doi.org/10.7567/SSDM.2011.P-3-5