Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)

B. C. Wang; S. L. Wu; S. J. Chang; C. T. Huang; O. Cheng

doi:https://doi.org/10.7567/SSDM.2011.P-3-6

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-3-6] Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹, S. L. Wu², S. J. Chang¹, C. T. Huang³, O. Cheng³ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-3-6

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