[P-3-6] Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹、S. L. Wu²、S. J. Chang¹、C. T. Huang³、O. Cheng³ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-3-6