The Japan Society of Applied Physics

[P-3-7] Hot-Carrier Effects on High-frequency Characteristics of RF LDMOS Transistors

K. M. Chen1、Z. W. Mou2、H. C. Kuo2、C. S. Chiu1、B. Y. Chen1、W. D. Liu1、M. Y. Chen3、Y. C. Yang3、K. L. Wang3、G. W. Huang1,2 (1.National Nano Device Labs.、2.National Chiao Tung Univ.、3.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-3-7