Hot-Carrier Effects on High-frequency Characteristics of RF LDMOS Transistors

K. M. Chen; Z. W. Mou; H. C. Kuo; C. S. Chiu; B. Y. Chen; W. D. Liu; M. Y. Chen; Y. C. Yang; K. L. Wang; G. W. Huang

doi:https://doi.org/10.7567/SSDM.2011.P-3-7

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-3-7] Hot-Carrier Effects on High-frequency Characteristics of RF LDMOS Transistors

K. M. Chen¹、Z. W. Mou²、H. C. Kuo²、C. S. Chiu¹、B. Y. Chen¹、W. D. Liu¹、M. Y. Chen³、Y. C. Yang³、K. L. Wang³、G. W. Huang^1,2 (1.National Nano Device Labs.、2.National Chiao Tung Univ.、3.United Microelectronics Corp. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-3-7

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