[P-4-1] Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells

K. Miyaji¹、C. Hung¹、K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.P-4-1