The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-4-16L] SET polarity dependent resistive switching memory characteristics using IrOx/GdOx/WOx/W structure

D. Jana1, S. Maikap1, T.C. Tien2, H.Y. Lee2, W.S. Chen2, F.T. Chen2, M. J. Kao2, M. J. Tsai2 (1.Chang Gung Univ., 2.ITRI , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-4-16L