[P-4-16L] SET polarity dependent resistive switching memory characteristics using IrOx/GdOx/WOx/W structure

D. Jana¹、S. Maikap¹、T.C. Tien²、H.Y. Lee²、W.S. Chen²、F.T. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.ITRI , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-4-16L