The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-4-2] Improved electrical properties of charge trap flash memories having a patterned surface in a Si3N4 trap layer

H. M. An1, J. W. Yang1, H. D. Kim1, J. W. Son2, W. J. Cho2, T. G. Kim1 (1.Korea Univ., 2.Kwangwoon Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.P-4-2