MOS Power Cells for Output Power Levels of 17 to 23 dBm

R. L. Wang; C. H. Liu; C. C. Chuang; C. H. Tu; Y. Z. Juang; Y. K. Su

doi:https://doi.org/10.7567/SSDM.2011.P-5-16

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-5-16] MOS Power Cells for Output Power Levels of 17 to 23 dBm

R. L. Wang¹, C. H. Liu², C. C. Chuang², C. H. Tu³, Y. Z. Juang³, Y. K. Su² (1.National Kaohsiung Normal Univ., 2.National Cheng Kung Univ., 3.National Chip Implementation Center , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-5-16

▲