[P-6-1] Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs

E. Y. Jeong¹、H. C. Sagong¹、D. Y. Choi¹、C. W. Sohn¹、J. S. Lee¹、C. Y. Kang²、Y. H. Jeong¹ (1.POSTECH , Korea、2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2011.P-6-1