The Japan Society of Applied Physics

[P-6-1] Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs

E. Y. Jeong1, H. C. Sagong1, D. Y. Choi1, C. W. Sohn1, J. S. Lee1, C. Y. Kang2, Y. H. Jeong1 (1.POSTECH , Korea, 2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2011.P-6-1