[P-6-10] 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Deep Levels in GaN Buffer Layer

Y. Ikawa¹、T. Hosokawa¹、Y. Kio¹、J. P. Ao¹、Y. Ohno¹ (1.Univ. of Tokushima , Japan)

https://doi.org/10.7567/SSDM.2011.P-6-10