[P-6-12L] An Al₂O₃/InSb/Si MOS Diode Having an Ultra-Thin InSb Layer

A. Kadoda¹、T. Iwasugi¹、K. Nakatani¹、K. Nakayama¹、M. Mori¹、K. Maezawa¹、E. Miyazaki²、T. Mizutani² (1.Univ. of Toyama、2.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-6-12L