High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

C. J. Yu; C. F. Huang; P. J. Chu; K. Y. Chen; S. S. H. Hsu; H. C. Chiu; F. Zhao

doi:https://doi.org/10.7567/SSDM.2011.P-6-7

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-6-7] High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

C. J. Yu¹、C. F. Huang¹、P. J. Chu¹、K. Y. Chen¹、S. S. H. Hsu¹、H. C. Chiu²、F. Zhao³ (1.National Tsing Hua Univ.、2.Chang Gung Univ. , Taiwan、3.Univ. of South Carolina , USA)

https://doi.org/10.7567/SSDM.2011.P-6-7

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