High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

C. J. Yu; C. F. Huang; P. J. Chu; K. Y. Chen; S. S. H. Hsu; H. C. Chiu; F. Zhao

doi:https://doi.org/10.7567/SSDM.2011.P-6-7

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-6-7] High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

C. J. Yu¹, C. F. Huang¹, P. J. Chu¹, K. Y. Chen¹, S. S. H. Hsu¹, H. C. Chiu², F. Zhao³ (1.National Tsing Hua Univ., 2.Chang Gung Univ. , Taiwan, 3.Univ. of South Carolina , USA)

https://doi.org/10.7567/SSDM.2011.P-6-7

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