Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO<sub>2</sub> nanorod-array patterned sapphire template

C. H. Chiu; C. C. Lin; C. H. Wang; S. P. Chang; C. Y. Jang; Z. Y. Li; H. C. Yang; H. C. Kuo; T. C. Lu; S. C. Wang

doi:https://doi.org/10.7567/SSDM.2011.P-7-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO₂ nanorod-array patterned sapphire template

C. H. Chiu¹、C. C. Lin¹、C. H. Wang¹、S. P. Chang^1,2、C. Y. Jang¹、Z. Y. Li¹、H. C. Yang²、H. C. Kuo¹、T. C. Lu¹、S. C. Wang¹ (1.National Chiao Tung Univ.、2.Epistar Co., Ltd. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-7-3

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2011 International Conference on Solid State Devices and Materials

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO₂ nanorod-array patterned sapphire template