Elucidating the electrical characteristics of an inversion domain boundary in p-type GaN of light-emitting diodes

Y. S. Wang; M. C. Hsieh; J. F. Chen; J. B. Huang; N. C. Chen

doi:https://doi.org/10.7567/SSDM.2011.P-7-5

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-7-5] Elucidating the electrical characteristics of an inversion domain boundary in p-type GaN of light-emitting diodes

Y. S. Wang¹, M. C. Hsieh¹, J. F. Chen¹, J. B. Huang², N. C. Chen³ (1.National Chiao Tung Univ., 2.National Taiwan Univ. of Sci. and Tech., 3.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-7-5

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