[A-3-2] Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs QDs embedded in strain-relaxed barriers

Y. Yasunaga¹、H. Ueyama¹、K. Morita¹、T. Kitada¹、T. Isu¹ (1.Univ. of Tokushima , Japan)

https://doi.org/10.7567/SSDM.2012.A-3-2