[A-3-2] Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs QDs embedded in strain-relaxed barriers
Y. Yasunaga1, H. Ueyama1, K. Morita1, T. Kitada1, T. Isu1
(1.Univ. of Tokushima , Japan)
https://doi.org/10.7567/SSDM.2012.A-3-2
