P-I-N Ge on Si photodiodes for high speed and low power consumption receivers

L. Virot; L. Vivien; J. M. Hartmann; J. M. Fedeli; D. Marris Morini; E. Cassan; C. Baudot; F. Boeuf

doi:https://doi.org/10.7567/SSDM.2012.A-7-2

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[A-7-2] P-I-N Ge on Si photodiodes for high speed and low power consumption receivers

L. Virot^1,2,3、L. Vivien¹、J. M. Hartmann²、J. M. Fedeli²、D. Marris Morini¹、E. Cassan¹、C. Baudot³、F. Boeuf³ (1.Univ. Paris-Sud、2.CEA LETI、3.STMicroelectronics , France)

https://doi.org/10.7567/SSDM.2012.A-7-2

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