P-I-N Ge on Si photodiodes for high speed and low power consumption receivers

L. Virot; L. Vivien; J. M. Hartmann; J. M. Fedeli; D. Marris Morini; E. Cassan; C. Baudot; F. Boeuf

doi:https://doi.org/10.7567/SSDM.2012.A-7-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[A-7-2] P-I-N Ge on Si photodiodes for high speed and low power consumption receivers

L. Virot^1,2,3, L. Vivien¹, J. M. Hartmann², J. M. Fedeli², D. Marris Morini¹, E. Cassan¹, C. Baudot³, F. Boeuf³ (1.Univ. Paris-Sud, 2.CEA LETI, 3.STMicroelectronics , France)

https://doi.org/10.7567/SSDM.2012.A-7-2

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