[B-1-2] Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

T. Imamoto^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST , Japan)

https://doi.org/10.7567/SSDM.2012.B-1-2