Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

T. Ishizu; H. Inoue; T. Matsuzaki; S. Nagatsuka; Y. Okazaki; T. Onuki; A. Isobe; Y. Shionoiri; K. Kato; T. Okuda; J. Koyama; S. Yamazaki

doi:https://doi.org/10.7567/SSDM.2012.B-1-3

[B-1-3] Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

T. Ishizu¹, H. Inoue¹, T. Matsuzaki¹, S. Nagatsuka¹, Y. Okazaki¹, T. Onuki¹, A. Isobe¹, Y. Shionoiri¹, K. Kato¹, T. Okuda¹, J. Koyama¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.B-1-3

2012 International Conference on Solid State Devices and Materials

[B-1-3] Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor