Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

T. Ishizu; H. Inoue; T. Matsuzaki; S. Nagatsuka; Y. Okazaki; T. Onuki; A. Isobe; Y. Shionoiri; K. Kato; T. Okuda; J. Koyama; S. Yamazaki

doi:https://doi.org/10.7567/SSDM.2012.B-1-3

[B-1-3] Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

T. Ishizu¹、H. Inoue¹、T. Matsuzaki¹、S. Nagatsuka¹、Y. Okazaki¹、T. Onuki¹、A. Isobe¹、Y. Shionoiri¹、K. Kato¹、T. Okuda¹、J. Koyama¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.B-1-3

2012 International Conference on Solid State Devices and Materials

[B-1-3] Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor