[B-2-2] Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

B. S. Jo¹, H. J. Kang¹, S. M. Joe¹, M. K. Jeong¹, S. K. Park², K. R. Han², B. G. Park¹, J. H. Lee¹ (1.Seoul National Univ., 2.SK Hynix Inc. , Korea)

https://doi.org/10.7567/SSDM.2012.B-2-2