The Japan Society of Applied Physics

[B-2-2] Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

B. S. Jo1, H. J. Kang1, S. M. Joe1, M. K. Jeong1, S. K. Park2, K. R. Han2, B. G. Park1, J. H. Lee1 (1.Seoul National Univ., 2.SK Hynix Inc. , Korea)