[B-2-2] Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

B. S. Jo¹、H. J. Kang¹、S. M. Joe¹、M. K. Jeong¹、S. K. Park²、K. R. Han²、B. G. Park¹、J. H. Lee¹ (1.Seoul National Univ.、2.SK Hynix Inc. , Korea)

https://doi.org/10.7567/SSDM.2012.B-2-2